Radiation Data
* * * Tables are sortable by clicking on the column headings * * *
- Radiation Testing TID Glossary
- Radiation Testing SEE Glossary
- Active Device Ratings
- TID
Test Summary - Logic
Usage
- Total ionizing dose (TID)
- Units are in rads (radiation absorbed dose) 100 rads = 1 J/kg
- Mechanism: charge trapping SiO2 and SiO2-Si interafce => change in device thresholds (CMOS) or gain (BJT)
- Mainly from protons and electrons (solar flare, trapped in earth orbit)
- Typical application < 100 kRad(Si)
- Single Event Effects
- Function of linear energy transfer (LET) from charged particles (heavy ions, protons) units in MeV/(mg/cm2)
- Figure of merit is device cross section. As a function of particle LET,
- Cross section = # event/particle fluence
- = # events / (# particles / area)
- = cm2
- Cross section => calculation of upset rate computed from flux density, (# particles/area) / time
| ThisTextHidden | Device | TID | SEE Upset (MeV-cm2/mg) |
SEE Latchup (MeV-cm2/mg) |
Dose Rate Upset | Dose Rate Burnout | Neutron (No Damage) |
Info Source |
|---|---|---|---|---|---|---|---|---|
| Logic | NSC 54AC00 STM 54AC00 |
300k | 93 MeV-cm^2/mg | 93 MeV-cm^2/mg | - | - | - | 5962-87549 |
| Logic | *UTMCS 54ACS02 | 500k | >80 MeV-cm^2/mg | >120 MeV-cm^2/mg | 1E9 rad(Si)/s | 1E12 rad(Si)/s | - | 5962-96514 |
| Logic | *UTMCS 54ACS193 | 500k | >108 MeV-cm^2/mg | >120 MeV-cm^2/mg | 1E9 rad(Si)/s | 1E12 rad(Si)/s | - | 5962-96566 |
| Oscillator Ic | 54ACT3301 | 150k | 40 MeV-cm^2/mg | >120 MeV-cm^2/mg | - | - | - | NSC AN-925 |
| Transistors | MRFC901 | 300k | - | - | - | - | - | Q-Tech |
| Transistors | 2C4957 | 300k | - | - | - | - | - | Q-Tech |
| Transistors | HFA3096 | 300k | - | - | - | - | - | 5962-07218 |
*ITAR Restricted
| Test Date | Facility | Frequency | IC | xistors | TID Limit |
|---|---|---|---|---|---|
| 7/19/2005 | GSFC | 150 | AC00 | MRFC901 | 150k |
| 7/19/2005 | GSFC | 16.8 | AC00 | MRFC901 | 150k |
| 7/19/2005 | GSFC | 16 | ACT3301 | - | 150k |
| 7/19/2005 | GSFC | 127.872 | CF5035 | - | 150k |
| 2/13/2007 | JL Shepherd (ICS) | 16 | AC00 (NSC) | MRFC901 2C4957 |
300k |
| 2/13/2007 | JL Shepherd (ICS) | 48 | ACS00 | MRFC901 | 300k |
| 5/17/2007 | JL Shepherd (ICS) | 24 | AC00 (STM) | MRFC901 2C4957 |
300k |
| 5/17/2007 | JL Shepherd (ICS) | 98 | AC00 (STM) | MRFC901 | 300k |
| 5/17/2007 | JL Shepherd (ICS) | 24 | ACS02 (UTMC) | HFA3096 | 300k |
| 5/17/2007 | JL Shepherd (ICS) | 66 | ACS02 (UTMC) | MRFC901 | 300k |
| 6/28/2007 | JL Shepherd (ICS) | - | AC00 (STM) ACS02 (UTMC) |
- | 450k |
| 8/16/2007 | JL Shepherd (ICS) | 8 and 33 MHZ | 54ACT3301 wafers reserved for S |
- | 150k |
| 8/16/2007 | JL Shepherd (ICS) | 44 | ACS00 | MRFC901 | 150k |
| 8/16/2007 | JL Shepherd (ICS) | 8 | TI 54S30 | 2N2222A | 150k |
| 2/7/2008 | JL Shepherd (ICS) | - | AC00 (STM) | MRFC901 2C4957 |
300k |
| 2/7/2008 | JL Shepherd (ICS) | - | AC00 (STM) | MRFC901 | 300k |
| 2/7/2008 | JL Shepherd (ICS) | 98.304 | AC00 (NSC) | MRFC901 | 150k |
| 2/7/2008 | JL Shepherd (ICS) | 8.192 | TI 54S30 | MRFC901 2C4957 |
150k |
Class S LOGIC IC usage, 12 - 150 MHZ (June 2008)
| Performance Requirements | ||
|---|---|---|
| QT | Vcc | Rad Limit |
Frequency Range |
Duty Cycle | IC |
|---|---|---|---|---|---|
| 5.0V | 100k | 12 to 32 | 40/60 |
ACTS08/ UTMC ACS02 |
|
| 625C 606C |
5.0V | 100k | 12 to 100 | 40/60 | STM AC00 |
| 5.0V | 100k | 32 to 70+ | 40/60 | UTMC ACS02 | |
| 625C 606C |
5.0V | 100k | 100 to 150 | 40/60 | NSC AC00 |
| 5.0V | 300k | 12 to 32 | 45/55 | ACTS08/ UTMC ACS02 |
|
| 5.0V | 300k | 12 to 100 | 40/60 | STM AC00 | |
| 5.0V | 300k | 32 to 70+ | 45/55 | UTMC ACS02 | |
| 625L 606L |
3.3V | 100k | 12 to 32 | 40/60 | STM AC00 |
| 3.3V | 100k | 12 to 32 | 45/55 | UTMC ACS02 | |
| 3.3V | 100k | 12 to 32 | 45/55 | H SOIV NAND | |
| 625L 606L |
3.3V | 100k | 32 to 70 | 40/60 | STM AC00 |
| 3.3V | 100k | 32 to 70 | 45/55 | H SOIV NAND | |
| 3.3V | 100k | 70 to 150 | 40/60 | NSC AC00 | |
| 3.3V | 100k | 70 to 150 | 45/55 | H SOIV NAND | |
| 3.3V | 300k | 12 to 32 | 40/60 | STM AC00 | |
| 3.3V | 300k | 12 to 32 | 45/55 | H SOIV NAND | |
| 3.3V | 300k | 32 to 70 | 40/60 | STM AC00 | |
| 3.3V | 300k | 32 to 70 | 45/55 | H SOIV NAND | |
| 3.3V | 300k | 70 to 150 | 40/60 | H SOIV NAND |
| Test Procedure | MIL-Spec | Method | In-house | |
|---|---|---|---|---|
| Yes | No | |||
| Non-Destructive Bond Pull | MIL-STD-883 | 2023 | ✓ | |
| Destructive Bond Pull | MIL-STD-883 | 2011 | ✓ | |
| Scanning Electronic Microscope | MIL-STD-883 | 2018 | ✓ | |
| Die Shear Strength | MIL-STD-883 | 2019 | ✓ | |
| Visual Inspection | MIL-STD-883 | 2009, 2010, 2017, 2014, 2032 | ✓ | |
| Stabilization Bake | MIL-STD-883 | 1008 | ✓ | |
| Thermal Shock | MIL-STD-883 | 1011 Over the temperature range-65ºC to +200ºC |
✓ | |
| Temperature Cycling | MIL-STD-883 | 1010 Over the temperature range-65ºC to +200ºC |
✓ | |
| Constant Acceleration | MIL-STD-883 | 2001 5,000g to 10,000g |
✓ | |
| Seal: Fine and Gross Leak | MIL-STD-883MIL-STD-202 | 1014112 | ✓ | |
| Particle Impact Noise Detection | MIL-STD-883MIL-STD-202 | 2020217 | ✓ | |
| Radiographic Inspection | MIL-STD-883MIL-STD-202 | 2012209 | ✓ | |
| Vibration (Sinusoidal) | MIL-STD-883MIL-STD-202 | 2007 Sweep from 10Hz to 2,000Hz with 20g peak to peak, or 30 Gs peak to peak204 |
✓ | |
| Random Vibration | MIL-STD-883MIL-STD-202 | 2026214 | ✓ | |
| Shock (Specified Pulse) | MIL-STD-883MIL-STD-202 | 2002 Up to 3,000g peak213 |
✓ | |
| Ambient Pressure | MIL-STD-883MIL-STD-202 | 1001105 | ✓ | |
| Resistance to Soldering Heat | MIL-STD-202 | 210 Up to 260ºC |
✓ | |
| Moisture Resistance | MIL-STD-883MIL-STD-202 | 1004106 | ✓ | |
| Salt Spray | MIL-STD-883MIL-STD-202 | 1009101 Up to 48 hours |
✓ | |
| Lead Integrity & Terminal Strength | MIL-STD-883MIL-STD-202 | 2004211 | ✓ | |
| Solderability | MIL-STD-883MIL-STD-202 | 2003208 | ✓ | |
| Resistance to Solvents | MIL-STD-883MIL-STD-202 | 2015215 | ✓ | |
| Internal Water Vapor Content | MIL-STD-883 | 1018 | ✓ | |
| Physical Dimensions | MIL-STD-883 | 2016 | ✓ | |
| Steady State Life | MIL-STD-883 | 1005 Tested for 1,000 hours at 125ºC typical |
✓ | |